Product Summary

The AO4401 P-Channel Enhancement Mode Field Effect Transistor uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.

Parametrics

AO4401 absolute maximum ratings: (1)Drain-Source Voltage, VDS: -30V; (2)Gate-Source Voltage, VGS: ±12V; (3)Continuous Drain Current, ID: -6.1A at TA=25℃; -5.1A at TA=70℃ ; (4)Pulsed Drain Current, IDM: -60A; (5)Power Dissipation, PD: 3W at TA=25℃; 2.1W at TA=70℃; (6)Junction and Storage Temperature Range, TJ, TSTG: -55 to 150℃.

Features

AO4401 features: (1)VDS (V) = -30V; (2)ID = -6.1 A; (3)RDS(ON) < 46mΩ (VGS = -10V); (4)RDS(ON) < 61mΩ (VGS = -4.5V); (5)RDS(ON) < 117mΩ (VGS = -2.5V).

Diagrams

AO4401 circuit diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
AO4401
AO4401
Other

Data Sheet
Negotiable 
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
AO4401
AO4401
Other

Data Sheet
Negotiable 
AO4402
AO4402

MOSFET N-CH 20V 20A 8SOIC
Data Sheet
0-3000: $0.23
AO4403
AO4403

MOSFET P-CH -30V -6.1A 8-SOIC
Data Sheet
0-1: $0.39
1-25: $0.27
25-100: $0.23
100-250: $0.20
250-500: $0.17
500-1000: $0.13
AO4404
AO4404
Other

Data Sheet
Negotiable 
AO4404B
AO4404B

MOSFET N-CH 30V 8.5A 8-SOIC
Data Sheet
0-1: $0.32
1-25: $0.23
25-100: $0.20
100-250: $0.17
250-500: $0.15
500-1000: $0.11
AO4405
AO4405
Other

Data Sheet
Negotiable