Product Summary
The MJD350TF is a silicon power transistor. The MJD350TF is designed for line operated audio output amplifier, switchmode power supply drivers and other switching applications.
Parametrics
MJD350TF absolute maximum ratings: (1)Collector-Emitter Voltage VCEO: 300 Vdc; (2)Collector-Base Voltage VCB: 300 Vdc; (3)Emitter-Base Voltage VEB: 3 Vdc; (4)Collector Current - Continuous-Peak IC: 0.5 to 0.75 Adc; (5)Total Power Dissipation @ TC = 25℃ Derate above 25℃ PD: 15 Watts; (6)Operating and Storage Junction Temperature Range TJ, Tstg: -65 to +150℃.
Features
MJD350TF features: (1)Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix); (2)Straight Lead Version in Plastic Sleeves (“–1” Suffix); (3)Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix); (4)Electrically Similar to Popular MJE340 and MJE350; (5)300 V (Min)— VCEO(sus); (6)0.5 A Rated Collector Current.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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MJD350TF |
Fairchild Semiconductor |
Transistors Bipolar (BJT) PNP Epitaxial Sil |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
MJD3055 |
ON Semiconductor |
Transistors Bipolar (BJT) 10A 60V 20W NPN |
Data Sheet |
Negotiable |
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MJD3055G |
ON Semiconductor |
Transistors Bipolar (BJT) 10A 60V 20W NPN |
Data Sheet |
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MJD3055T4 |
STMicroelectronics |
Transistors Bipolar (BJT) NPN Gen Pur Switch |
Data Sheet |
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MJD30CTF |
Fairchild Semiconductor |
Transistors Bipolar (BJT) |
Data Sheet |
Negotiable |
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MJD31 |
Other |
Data Sheet |
Negotiable |
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MJD31,C |
Other |
Data Sheet |
Negotiable |
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