(China (Mainland))
Product Summary
The AO4600 is a field effect transistor which uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications.
Parametrics
AO4600 maximum ratings: (1)Drain-Source Voltage: 30/-30V; (2)Gate-Source Voltage:±12V(Ta=25℃;(3)Continuous Drain: 6.9/-5V(Ta=70℃; (4)Current A: 5.8/-4.2V; (5)Power dissipation: 2w(Ta=25℃, 1.44w(Ta=70℃; (6)Junction and Storage Temperature Range: -55 to 150℃.
Features
AO4600 features: (1)n-channel: VDS (V) = 30V, ID = 6.9A (VGS = 10V), Rds< 27mΩ, < 32mΩ, < 50mΩ; (2)p-channel: VDS (V) =- 30V, ID = -5A (VGS = 10V), Rds< 49mΩ, < 64mΩ, < 120mΩ.
Diagrams
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 AO4600 |
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Data Sheet |
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| Image | Part No | Mfg | Description | |
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AO4600 |
Other |
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Negotiable |
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AO4601 |
Other |
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AO4604 |
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Negotiable |
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AO4606 |
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Negotiable |
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AO4607 |
Other |
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Negotiable |
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AO4609 |
Other |
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Negotiable |
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